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Here we demonstrate up to 290 K laser operation in GeSn/GeSn multi-QW microdisks cavities under optical pumping. The QW and barrier were performed by varying the Sn content. We used specific layer transfer technology and a Silicon Nitride (SiN) stressor layer was introduced to inject tensile strain in the active region such to enhance the directness of the transition. Interestingly this is the highest temperature of operation for GeSn quantum wells lasers. This progress opens the route towards room temperature electrically pumped laser operating. |
