Selective-area intermixing for implementing InAs QDs based active-passive integration for photonic integrated circuits

Abigail Enderson; Pawan Mishra; Zhongming Cao; Fwoziah Albeladi; Sara-Jayne Gillgrass; Bogdan-Petrin Ratiu; Nianhua Peng; Mingchu Tang; Huiyun Liu; Samuel Shutts; Peter Smowton

doi:10.1117/12.3002710

13 March 2024 Selective-area intermixing for implementing InAs QDs based active-passive integration for photonic integrated circuits

Abigail Enderson, Pawan Mishra, Zhongming Cao, Fwoziah Albeladi, Sara-Jayne Gillgrass, Bogdan-Petrin Ratiu, Nianhua Peng, Mingchu Tang, Huiyun Liu, Samuel Shutts, Peter Smowton

Author Affiliations +

Proceedings Volume PC12905, Novel In-Plane Semiconductor Lasers XXIII; PC1290502 (2024) https://doi.org/10.1117/12.3002710
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

We present a postgrowth selective-area-intermixing approach for on-chip III-V based monolithically integrated laser-waveguide structures for photonic integrated circuits. Implanting selective areas with an energy of 300 KeV and dose of 5 ×1012 cm-2 induced crystal defects in the InAs quantum dot gain material, results in a shifted absorption edge and complete quenching of optical emission. We successfully recovered the optical quality of the gain material through optimized rapid thermal annealing at 635 OC and achieved enhanced intermixing in the implanted region thus causing a relative blueshift of 20 nm in the passive waveguides, mitigating absorption at the laser emission wavelength.

Conference Presentation

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Abigail Enderson, Pawan Mishra, Zhongming Cao, Fwoziah Albeladi, Sara-Jayne Gillgrass, Bogdan-Petrin Ratiu, Nianhua Peng, Mingchu Tang, Huiyun Liu, Samuel Shutts, and Peter Smowton "Selective-area intermixing for implementing InAs QDs based active-passive integration for photonic integrated circuits", Proc. SPIE PC12905, Novel In-Plane Semiconductor Lasers XXIII, PC1290502 (13 March 2024); https://doi.org/10.1117/12.3002710

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