Photonics with nanostructured III-nitride semiconductors

Ganapathi S. Subramania

doi:10.1117/12.3012021

13 March 2024 Photonics with nanostructured III-nitride semiconductors

Ganapathi S. Subramania

Proceedings Volume PC12896, Photonic and Phononic Properties of Engineered Nanostructures XIV; PC128960Q (2024) https://doi.org/10.1117/12.3012021
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Nanophotonics based on III-nitride materials enable devices in the visible and ultraviolet frequencies that are important for many applications like solid-state lighting, lasers, flat optics and quantum information science.We will discuss InGaN quantum well based nanowire array photonic crystals demonstrating optically pumped low threshold lasing. We will also discuss electrochemical and laser assisted photelectrochemical etching of III-nitride nanostructures for creating new functionalities and phenomena such as quantum dots in wire for single photon generation and nanowire array based metasurfaces. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.

Conference Presentation

Citation Download Citation

Ganapathi S. Subramania "Photonics with nanostructured III-nitride semiconductors", Proc. SPIE PC12896, Photonic and Phononic Properties of Engineered Nanostructures XIV, PC128960Q (13 March 2024); https://doi.org/10.1117/12.3012021

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