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9 March 2024 Investigating the lateral carrier diffusion in MBE grown InGaN quantum wells as function of quantum well width
Conny Becht, Ulrich T. Schwarz, Mateusz Hajdel, Grzegorz Muziol
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288617 (2024) https://doi.org/10.1117/12.3001849
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
A micro-photoluminescence setup is used to investigate the ambipolar diffusion of charge carriers in InGaN quantum wells (QW) grown by molecular beam epitaxy. The thickness of the active region varies between 2.6 and 25 nm. Our results show for all samples diffusion in the range of a few μm. Additionally, a larger QW thickness is accompanied by a smaller luminescence spot radius in our experiment. However, a larger dark carrier diffusion with increasing QW thickness cannot be excluded due to an increasing carrier lifetime. Moving away from the excitation center leads to a stronger tilt of the QW potential due to lower carrier density, consequently suppressing radiative recombination.
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(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Conny Becht, Ulrich T. Schwarz, Mateusz Hajdel, and Grzegorz Muziol "Investigating the lateral carrier diffusion in MBE grown InGaN quantum wells as function of quantum well width", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288617 (9 March 2024); https://doi.org/10.1117/12.3001849
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KEYWORDS
Quantum wells
Diffusion
Indium gallium nitride
Luminescence
Electric fields
Heterojunctions
Molecular beam epitaxy
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