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Silicon-based Schottky barrier photodetectors (SBPDs) have become a popular choice for near-infrared (NIR) applications due to their cost-effectiveness and compatibility with the CMOS fabrication process. This work provides a quantitative analysis of the external quantum efficiency in platinum/copper bilayer SBPDs, extending the conventional single-layer analyses. We conducted a systematic investigation of optical losses, energy distribution losses, and momentum mismatch losses, successfully matching our theoretical predictions to experimental results. Our study also demonstrates the long-term stability of bilayer SBPDs in the NIR region. These findings have significant implications for affordable NIR photodetection technologies.
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