Presentation
9 March 2024 Quantitative analysis of external quantum efficiencies in bilayer-based Schottky barrier photodetectors
Author Affiliations +
Proceedings Volume PC12882, Optical Components and Materials XXI; PC128820C (2024) https://doi.org/10.1117/12.3002832
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Silicon-based Schottky barrier photodetectors (SBPDs) have become a popular choice for near-infrared (NIR) applications due to their cost-effectiveness and compatibility with the CMOS fabrication process. This work provides a quantitative analysis of the external quantum efficiency in platinum/copper bilayer SBPDs, extending the conventional single-layer analyses. We conducted a systematic investigation of optical losses, energy distribution losses, and momentum mismatch losses, successfully matching our theoretical predictions to experimental results. Our study also demonstrates the long-term stability of bilayer SBPDs in the NIR region. These findings have significant implications for affordable NIR photodetection technologies.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jongeun Seok, Yeonghoon Jin, and Kyoungsik Yu "Quantitative analysis of external quantum efficiencies in bilayer-based Schottky barrier photodetectors", Proc. SPIE PC12882, Optical Components and Materials XXI, PC128820C (9 March 2024); https://doi.org/10.1117/12.3002832
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KEYWORDS
External quantum efficiency

Photodetectors

Quantitative analysis

Near infrared

Silicon

Quantum optics experiments

Metals

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