Exploration of novel type-II quantum well VECSELs at 2.3-µm center wavelength

N. Huwyler; M. Gaulke; M. C. Schuchter; M. Golling; U. Keller

doi:10.1117/12.3002548

13 March 2024 Exploration of novel type-II quantum well VECSELs at 2.3-μm center wavelength

N. Huwyler, M. Gaulke, M. C. Schuchter, M. Golling, U. Keller

Proceedings Volume PC12868, Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII; PC128680C (2024) https://doi.org/10.1117/12.3002548
Event: SPIE LASE, 2024, San Francisco, California, United States

Abstract

There is significant interest in developing high-power lasers with excellent beam quality and tunable wavelength in the Short-Wave Infrared (SWIR) to mid-infrared range. Type-II Quantum Well (QW) VECSELs have been demonstrated in the GaAs material system. However, their true potential lies in suppressing Auger recombination at wavelengths beyond 2.3 μm in the GaSb material system where type-I QWs face increasing challenges. Therefore, our research focuses on investigating type-II QW configurations to extend the emission wavelength of VECSELs. Here, we explore VECSEL operation at 2.3 μm using w-like AlSb/InAs/AlGaSb/InAs/AlSb QWs, which offer longer operation wavelength by adjusting their thickness. We aim to compare these novel type-II QW VECSELs with conventional type-I InGaAsSb QWs. Careful optimization of QW number, pump absorption, and overall design is crucial due to reduced wavefunction overlap in the type-II configuration. Precise control of the growth is also essential to achieve accurate bandgap engineering and smooth interfaces for efficient radiative recombination.

Conference Presentation

Citation Download Citation

N. Huwyler, M. Gaulke, M. C. Schuchter, M. Golling, and U. Keller "Exploration of novel type-II quantum well VECSELs at 2.3-μm center wavelength", Proc. SPIE PC12868, Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII, PC128680C (13 March 2024); https://doi.org/10.1117/12.3002548

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