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The characteristic of the Hall effects and allied is that the macroscopic topological properties of the device determines the electric response of the system [1].
This property is related to the low power consumption of spintronics devices in general. In the present study, we explore the power efficiency of Hall-like effects in spintronics devices by calculating a measuring the power that can be injected from the Hall device to a load circuit.
Experimentally, with studied the properties of the anomalous-Hall current that is injected from a Hall bar into a lateral load circuit. The anomalous Hall current is generated by a ferrimagnetic Hall bar with lateral contacts lithographied at the two edges. The current, the voltage and the power injected in the lateral circuit are studied as a function of the magnetization states and the load resistance. A sharp maximum of the power efficiency as a function of the load resistance is observed, which corresponds to the condition of resistance matching with the anomalous Hall resistance. The typical profile and amplitude of voltage, current and power are in conformity with recent predictions based on a non-equilibrium variational approach [2-4].
The result corroborates the role of the screening effects, and the presence of surface currents flowing at the edges of the Hall bar over the Debye-Fermi length scale.
[1] Madon et al. Corbino magnetoresistance in ferromagnetic layers: Two representative examples Ni81Fe19 and Co83Gd17 Phys. Rev. B 98, 220405(R) (2018)
[2] M. Creff et al., Surface current in Hall devices, J. Appl. Phys 128, 054501 (2020)
[3] F. Faisant et al., The physical properties of the Hall current, J. Appl. Phys. 129, 144501 (2021)
[4] M. Creff, E. Olive, and J.-E. Wegrowe, Screening effect in Spin-Hall Devices, Phys. Rev. B 105, 174419 (2022)
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