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Fabrication of structures with high aspect ratios (HAR) enables creation of metasurface optics with ever-increasing functionality. Dielectric meta-atoms consist of transverse (x,y) shapes extruded in the z-dimension. The phase discontinuity imparted by the meta-atom is a function of the dielectric constant of the material and the z-height of the meta-atom. The performance of the meta-optic improves with larger phase swings. Here we demonstrate HAR etched structures in silicon and gallium arsenide. Initial etch development employs interferometric lithography while final patterns are realized using e-beam patterning. The paper will discuss this etch development process for both material sets.
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D. Bruce Burckel, Katherine M. Musick, Travis R. Young, Loren Gastian, John Mudrick, "Fabrication of high aspect ratio structures for meta-surface optics," Proc. SPIE PC12646, Metamaterials, Metadevices, and Metasystems 2023, PC126460T (4 October 2023); https://doi.org/10.1117/12.2678379