Growth of suspended hexagonal boron nitride on GaN substrate by MOCVD (Conference Presentation)

Seokho Moon; Adrien Rousseau; Francis Ngome Okello Odongo; Youngjae Kim; Yunjae Park; Jiye Kim; Pierre Valvin; Jaehee Cho; Feng Ding; Jaedong Lee; Si-Young Choi; Bernard Gil; Guillaume Cassabois; Jong Kyu Kim

doi:10.1117/12.2649771

14 March 2023 Growth of suspended hexagonal boron nitride on GaN substrate by MOCVD (Conference Presentation)

Seokho Moon, Adrien Rousseau, Francis Ngome Okello Odongo, Youngjae Kim, Yunjae Park, Jiye Kim, Pierre Valvin, Jaehee Cho, Feng Ding, Jaedong Lee, Si-Young Choi, Bernard Gil, Guillaume Cassabois, Jong Kyu Kim

Author Affiliations +

Proceedings Volume PC12441, Light-Emitting Devices, Materials, and Applications XXVII; PC124410O (2023) https://doi.org/10.1117/12.2649771
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Hexagonal boron nitride (h-BN), an insulating two-dimensional layered material, has recently attracted a great attention due to its fascinating optical, electrical, and thermal properties, and promising applications across the fields of photonics, quantum optics, and electronics. Here, we exploit the scalable approach to grow h-BN on epitaxial gallium nitride (GaN) substrate by using metal-organic chemical vapor deposition (MOCVD). It was found that at a specific MOCVD growth condition, a very unique h-BN film can be grown on GaN substrates, in which few-layer h-BN film is suspended on GaN nanoneedles. The combination of state-of-the-art microscopic and spectroscopic analyses revealed that the suspended h-BN films exhibit unprecedented DUV photoluminescence spectra. In addition, the h-BN films show unprecedented atomic stacking configuration, the mechanism of which will be discussed with optical and structural characterizations and theoretical calculations.

Conference Presentation

Citation Download Citation

Seokho Moon, Adrien Rousseau, Francis Ngome Okello Odongo, Youngjae Kim, Yunjae Park, Jiye Kim, Pierre Valvin, Jaehee Cho, Feng Ding, Jaedong Lee, Si-Young Choi, Bernard Gil, Guillaume Cassabois, and Jong Kyu Kim "Growth of suspended hexagonal boron nitride on GaN substrate by MOCVD (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC124410O (14 March 2023); https://doi.org/10.1117/12.2649771

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