Samuel Shutts,1 Zhongming Cao,1 Bogdan Ratiu,1 Oumaima Abouzaid,1 Maryam Alsayyadi,1 Josie Nabialek,1 Ben Salmond,1 Harry Gordon-Moys,1 Craig P. Allford,1 Sara-Jayne Gillgrasshttps://orcid.org/0000-0003-2611-9168,1 Qiang Li,1 Peter M. Smowton1
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We demonstrate high-gain InAs QDs targeting C-band and L-band using a five QD-layer structure grown via MOCVD, with a photoluminescence broadening of ~55 meV. Lasers were fabricated with cavity lengths from 2000-µm down to 333-µm, with cleaved un-coated facets. Threshold current density increases monotonically with temperature over a range of 300 K to 380 K for all cavity lengths with a factor of 3.0 and 3.4 increase for the longest and shortest cavities, respectively. Measurements of lasing spectrum reveal that even the shortest cavity maintains a stable increase in wavelength up to 390 K with no observable transition to the excited state.
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Samuel Shutts, Zhongming Cao, Bogdan Ratiu, Oumaima Abouzaid, Maryam Alsayyadi, Josie Nabialek, Ben Salmond, Harry Gordon-Moys, Craig P. Allford, Sara-Jayne Gillgrass, Qiang Li, Peter M. Smowton, "InAs quantum dots emitting in C and L-wavelength band," Proc. SPIE PC12440, Novel In-Plane Semiconductor Lasers XXII, PC1244003 (17 March 2023); https://doi.org/10.1117/12.2656101