Lydia Jarvis,1 Ben Maglio,1 Sara Gillgrasshttps://orcid.org/0000-0003-2611-9168,1 Craig Allford,1 Fwoziah Albeladi,1,2 Abigail Enderson,1 Sam Shutts,1 Huiwen Deng,3 Mingchu Tang,3 Huiyun Liu,3 Peter M. Smowton1
1Cardiff Univ. (United Kingdom) 2Univ. of Jeddah (Saudi Arabia) 3Univ. College London (United Kingdom)
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We introduce direct n-doping of quantum dots together with modulation p-doping as a technique to reduce both the threshold current density and the temperature dependence of threshold current density in 1.3um emitting quantum dot lasers. Threshold current density in 1mm long QD lasers with cleaved and uncoated facets is effectively halved at both 27°C and at 97°C when using co-doping as compared to the undoped case. Results indicate that modulation p-doping can improve the threshold current temperature dependence and direct n-doping reduces the magnitude of threshold current density and that the benefits of each is maintained when used together.
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