Presentation
17 March 2023 Hybrid GaSb/Si3N4 widely tunable Vernier laser emitting around 2.55 µm
Author Affiliations +
Abstract
We demonstrate a hybrid GaSb/Si3N4 Vernier laser in an edge-coupled configuration emitting around 2.55 µm, consisting of a GaSb-based reflective semiconductor amplifier, and a reflective Si3N4 circuit, consisting of two resistively tunable ring resonators in a loop mirror towards Vernier type operation. The hybrid laser exhibited a threshold current of 190 mA, and a maximum output power of 6.4 mW around 325 mA injection current. Moreover, the hybrid laser showed a broad tuning range of 170 nm, with an access to wavelengths from 2474 nm to 2644 nm, and a > 1 mW output power across the whole tuning band.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Samu-Pekka Ojanen, Jukka Viheriälä, Nouman Zia, Eero Koivusalo, Joonas Hilska, Heidi Tuorila, and Mircea Guina "Hybrid GaSb/Si3N4 widely tunable Vernier laser emitting around 2.55 µm", Proc. SPIE PC12424, Integrated Optics: Devices, Materials, and Technologies XXVII, PC124240C (17 March 2023); https://doi.org/10.1117/12.2649922
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KEYWORDS
Tunable lasers

Reflectivity

Amplifiers

Laser resonators

Resonators

Semiconductor lasers

Semiconductors

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