Daniel Hunter,1 Naresh-Kumar Gunasekar,1 Paul R. Edwards,1 Fabien Massabuauhttps://orcid.org/0000-0003-1008-1652,1 Isa Hatipoglu,2 Partha Mukhopadhyay,3 Winston V. Schoenfeld,3 Robert W. Martin1
1Univ. of Strathclyde (United Kingdom) 2Sirnak Üniv. (Turkey) 3CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
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Tin-gallium oxide (TGO) epilayers have been characterized through the electron microscopy techniques of wavelength-dispersive X-ray spectroscopy (WDX) and cathodoluminescence. Tin incorporation was found to be highly dependent on growth conditions with (0001)-sapphire and (010)-Ga2O3 substrates enhancing tin incorporation. Cathodoluminescence measurements show that TGO luminescence consists of an enhanced blue emission and quenched UV when compared to Ga2O3.and the onset of new green emission originating from the TGO, further correlated through cross-sectional WDX and cathodoluminescence mapping. As well as luminescence intensity changes TGO films display redshifted luminescence bands associated with a bandgap reduction due to the alloying, confirmed through optical transmission measurements.
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Daniel Hunter, Naresh-Kumar Gunasekar, Paul R. Edwards, Fabien Massabuau, Isa Hatipoglu, Partha Mukhopadhyay, Winston V. Schoenfeld, Robert W. Martin, "Tin/gallium oxide alloying probed using X-ray microanalysis and cathodoluminescence (Conference Presentation)," Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC124220C (16 March 2023); https://doi.org/10.1117/12.2655959