Watt-class high-power high-beam quality operation of GaN-based photonic-crystal surface-emitting laser

Kei Emoto; Tomoaki Koizumi; Takuya Inoue; Masaki Hirose; Masahiro Jutori; Kenji Ishizaki; Menaka De Zoysa; Hiroyuki Togawa; Susumu Noda

doi:10.1117/12.2652832

21 March 2023 Watt-class high-power high-beam quality operation of GaN-based photonic-crystal surface-emitting laser

Kei Emoto, Tomoaki Koizumi, Takuya Inoue, Masaki Hirose, Masahiro Jutori, Kenji Ishizaki, Menaka De Zoysa, Hiroyuki Togawa, Susumu Noda

Author Affiliations +

Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2652832
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

In this talk, we present watt-class high-power, high-beam-quality operation of GaN-based photonic crystal lasers (PCSELs) at blue wavelengths, having a low threshold current density. First, we design a device layer structure to enhance the 2D photonic-crystal resonant effect in GaN-based materials, considering their low refractive index contrast. Next, we develop a new nano-fabrication method for realizing GaN/air structures with sufficiently small disorders. Then, we introduce an asymmetric unit cell based on a double-lattice structure in order to enhance the extraction efficiency of light toward the optical facet for high-power operation. Based on these optimizations, we successfully develop GaN PCSELs with high, watt-class (>1 W) output power and circular, single-lobed beam with a very narrow (~0.2°) divergence angle. In addition, we demonstrate CW operation with a high output power (~320 mW) and a high beam quality (M2~1).

Conference Presentation

Citation Download Citation

Kei Emoto, Tomoaki Koizumi, Takuya Inoue, Masaki Hirose, Masahiro Jutori, Kenji Ishizaki, Menaka De Zoysa, Hiroyuki Togawa, and Susumu Noda "Watt-class high-power high-beam quality operation of GaN-based photonic-crystal surface-emitting laser", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2652832

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