Micro-photoluminescence and micro-electroluminescence analysis of wide InGaN/GaN quantum wells

Conny Becht; Ulrich Theodor Schwarz; Mateusz Hajdel; Grzegorz Muziol

doi:10.1117/12.2648411

21 March 2023 Micro-photoluminescence and micro-electroluminescence analysis of wide InGaN/GaN quantum wells

Conny Becht, Ulrich Theodor Schwarz, Mateusz Hajdel, Grzegorz Muziol

Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2648411
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Wide well blue InGaN LEDs and laser diodes show high internal quantum efficiency and high differential optical gain. We investigate the contribution of recombination from ground and excited confined states in MBE grown LED or laser structures with 2.6 nm, 7.8 nm and 15 nm wide InGaN wells by low and room temperature µEL and µPL. For the 7.8 nm well, the blue-shift caused by piezoelectric field screening (QCSE) and transition from ground to higher confined states are observed separably. The 25 nm emits at the band edge of the fully screened InGaN region and shows pronounced state filling.

Conference Presentation

Citation Download Citation

Conny Becht, Ulrich Theodor Schwarz, Mateusz Hajdel, and Grzegorz Muziol "Micro-photoluminescence and micro-electroluminescence analysis of wide InGaN/GaN quantum wells", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648411

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