Presentation
21 March 2023 Carrier localization effects in c-plane (Al,Ga)N quantum wells
Author Affiliations +
Abstract
Aluminium gallium nitride ((Al,Ga)N) quantum wells have attracted significant interest for optoelectronic device applications in the ultraviolet (UV) spectral range. Here, we present an atomistic theoretical analysis of the impact of random alloy fluctuations on the electronic and optical properties of c-plane (Al,Ga)N/AlN quantum wells. Special attention is paid to the impact of the Al content on the results. Our studies show that already random alloy fluctuations are sufficient to lead to strong carrier localization effects. Furthermore, our calculations reveal that the degree of optical polarization is strongly affected by alloy fluctuations.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stefan Schulz and Robert Finn "Carrier localization effects in c-plane (Al,Ga)N quantum wells", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2646311
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KEYWORDS
Quantum wells

Aluminum

Ultraviolet radiation

Light emitting diodes

Optical properties

Magnetism

Optoelectronic devices

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