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We report on LWIR multi-stage thermoelectrically cooled cascade photodiodes with InAs/InAsSb superlattice absorbers and contact layers and bulk quaternary wide-gap regions. The aim is to reach high detectivity in conditions where the conventional IR photodiodes suffer from a very low quantum efficiency and extremely low resistances due to a high thermal generation of charge carriers. The heterostructures were grown by MBE on GaAs substrates buffered with GaSb. The connections between stages are made using heavily doped narrow-gap p+/n+ tunnel junctions. The room-temperature detectivities of the devices are close to that of immersed MCT multijunction detectors offered by VIGO (PVMI series).
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