HOT LWIR multi-junction cascade photovoltaic detectors based on InAs/InAsSb superlattices (Conference Presentation)

Łukasz Kubiszyn; Krystian Michalczewski; Jarosław Jureńczyk; Waldemar Gawron; Józef Piotrowski

doi:10.1117/12.2646608

11 October 2022 HOT LWIR multi-junction cascade photovoltaic detectors based on InAs/InAsSb superlattices (Conference Presentation)

Łukasz Kubiszyn, Krystian Michalczewski, Jarosław Jureńczyk, Waldemar Gawron, Józef Piotrowski

Author Affiliations +

Proceedings Volume PC12234, Infrared Sensors, Devices, and Applications XII; PC1223408 (2022) https://doi.org/10.1117/12.2646608
Event: SPIE Optical Engineering + Applications, 2022, San Diego, California, United States

Abstract

We report on LWIR multi-stage thermoelectrically cooled cascade photodiodes with InAs/InAsSb superlattice absorbers and contact layers and bulk quaternary wide-gap regions. The aim is to reach high detectivity in conditions where the conventional IR photodiodes suffer from a very low quantum efficiency and extremely low resistances due to a high thermal generation of charge carriers. The heterostructures were grown by MBE on GaAs substrates buffered with GaSb. The connections between stages are made using heavily doped narrow-gap p+/n+ tunnel junctions. The room-temperature detectivities of the devices are close to that of immersed MCT multijunction detectors offered by VIGO (PVMI series).

Conference Presentation

Citation Download Citation

Łukasz Kubiszyn, Krystian Michalczewski, Jarosław Jureńczyk, Waldemar Gawron, and Józef Piotrowski "HOT LWIR multi-junction cascade photovoltaic detectors based on InAs/InAsSb superlattices (Conference Presentation)", Proc. SPIE PC12234, Infrared Sensors, Devices, and Applications XII, PC1223408 (11 October 2022); https://doi.org/10.1117/12.2646608

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KEYWORDS

Long wavelength infrared

Superlattices

Photovoltaic detectors

Sensors

Photodiodes

Doping

Quantum efficiency

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