Presentation
5 March 2022 Emission uniformity of UVC laser diodes on AlN substrates
Author Affiliations +
Abstract
Deep-ultraviolet laser diodes have achieved pulsed lasing at room temperature by improving the crystal quality and establishing a hole injection method using polarization doping techniques. In the initial demonstration, the threshold current density was very high at 25kA/cm2, which is a major barrier to continuous-wave lasing. The reason for this high threshold current density was found to be process-induced non-uniformity of emission. By suppressing this non-uniformity through LD device design, we were able to significantly reduce the threshold current density to about 12 kA/cm2.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Maki Kushimoto, Ziyi Zhang, Yoshio Honda, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano "Emission uniformity of UVC laser diodes on AlN substrates", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010L (5 March 2022); https://doi.org/10.1117/12.2604370
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KEYWORDS
Semiconductor lasers

Aluminum nitride

Crystals

Deep ultraviolet

Heat treatments

Doping

Laser crystals

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