Demonstration and temperature-dependent analysis of efficient semipolar violet laser diodes heteroepitaxially grown on high-quality low-cost GaN/sapphire substrates

Haojun Zhang; Hongjian Li; Panpan Li; Shuji Nakamura; Steven DenBaars

doi:10.1117/12.2610614

5 March 2022 Demonstration and temperature-dependent analysis of efficient semipolar violet laser diodes heteroepitaxially grown on high-quality low-cost GaN/sapphire substrates

Haojun Zhang, Hongjian Li, Panpan Li, Shuji Nakamura, Steven DenBaars

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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120010G (2022) https://doi.org/10.1117/12.2610614
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

This presentation recorded at SPIE Photonics West 2022.

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Haojun Zhang, Hongjian Li, Panpan Li, Shuji Nakamura, and Steven DenBaars "Demonstration and temperature-dependent analysis of efficient semipolar violet laser diodes heteroepitaxially grown on high-quality low-cost GaN/sapphire substrates", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120010G (5 March 2022); https://doi.org/10.1117/12.2610614

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