Presentation
5 March 2022 Examination of silicon diffusion in GaN
Malgorzata Iwinska, Pawel Prystawko, Andrzej Taube, Kacper Sierakowski, Rafal Jakiela, Michal Bockowski
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Abstract
Silicon diffusion process was investigated in GaN layers crystallized by metal-organic vapor phase epitaxy (MOVPE) on native ammonothermal substrates of the highest structural quality. N-type (Si-doped) and p-type (Mg-doped) layers were implanted with Si and treated with ultra-high-pressure annealing. The morphology of the layers was examined at each step by optical microscopy and atomic force microscopy. The crystallographic structure was evaluated by X-ray diffraction measurements. The diffusion of Si was analyzed basing on depth profiles from secondary ion mass spectrometry. Temperature-dependent diffusion coefficients, pre-exponential factors, and activation energies for Si diffusion in n-type and p-type MOVPE-GaN were determined and compared.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Malgorzata Iwinska, Pawel Prystawko, Andrzej Taube, Kacper Sierakowski, Rafal Jakiela, and Michal Bockowski "Examination of silicon diffusion in GaN", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200107 (5 March 2022); https://doi.org/10.1117/12.2607583
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KEYWORDS
Silicon

Diffusion

Gallium nitride

Atomic force microscopy

Crystals

Mass spectrometry

Nitrogen

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