Presentation + Paper
20 September 2016 Heterogeneously integrated waveguide-coupled photodiodes on silicon-on-diamond (SOD)
Xiaojun Xie, Anand Ramaswamy, Yang Shen, Zhanyu Yang, Matt Jacob-Mitos, Ye Wang, Jizhao Zang, Erik Norberg, Greg Fish, Joe C. Campbell, Andreas Beling
Author Affiliations +
Abstract
We report on InP-based high power modified uni-traveling carrier (MUTC) photodiodes heterogeneously integrated on silicon on diamond (SOD) waveguides. Typical dark currents of MUTC photodiodes on SOD waveguides are 20 nA at - 5 V bias voltage. A 50-μm long photodiode has an internal responsivity of 1.07 A/W at 1550 nm wavelength. The bandwidths of photodiodes with active areas of 14×25 μm2, 14×50 μm2, 14×100 μm2 and 14×150 μm2 are 22 GHz, 16 GHz, 10 GHz and 7 GHz, respectively. The maximum output RF powers of 14×100 μm2 photodiodes are 13 dBm, 14.4 dBm and 15.3 dBm at 10 GHz, respectively. The maximum DC dissipated power is 0.67 W. To our knowledge, this is the first demonstration of III-V photodiodes integrated on SOD waveguides.
Conference Presentation
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaojun Xie, Anand Ramaswamy, Yang Shen, Zhanyu Yang, Matt Jacob-Mitos, Ye Wang, Jizhao Zang, Erik Norberg, Greg Fish, Joe C. Campbell, and Andreas Beling "Heterogeneously integrated waveguide-coupled photodiodes on silicon-on-diamond (SOD)", Proc. SPIE 9974, Infrared Sensors, Devices, and Applications VI, 997406 (20 September 2016); https://doi.org/10.1117/12.2237851
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photodiodes

Silicon

Waveguides

Diamond

Microwave photonics

Semiconducting wafers

Silica

Back to Top