Silicon carbide DC-DC multilevel Cuk converter

Yasser Almalaq; Ayoob Alateeq; Mohammad Matin

doi:10.1117/12.2238931

19 September 2016 Silicon carbide DC-DC multilevel Cuk converter

Yasser Almalaq, Ayoob Alateeq, Mohammad Matin

Proceedings Volume 9957, Wide Bandgap Power Devices and Applications; 99570I (2016) https://doi.org/10.1117/12.2238931
Event: SPIE Optical Engineering + Applications, 2016, San Diego, California, United States

Abstract

In this paper, DC-DC multilevel cuk converter using silicon carbide (SiC) Components is presented. Cuk converter gives output voltage with negative polarity. This topology is useful for applications require high gain with limitation on duty cycle. The gain of the design can be enhanced by increasing the number of multiplier level (N). This relation between the gain and the number of levels is the major advantage of this multilevel cuk converter. In the proposed cuk converter, a single SiC MOSFET, 2N-1 SiC schottky diodes, 2N capacitors, 2 inductors, and single input voltage are used to supply a load with negative polarity. 300V input voltage, 50KHz switching frequency, and 75% duty cycle are the main parameters used in the design. The output parameters are 3KW power and -5.7 KV voltage. Because this design can be used in applications which temperature plays a critical role, the relation between increasing temperature and output voltage and power are tested. The design is simulated using LTspice software and the results are discussed.

Citation Download Citation

Yasser Almalaq, Ayoob Alateeq, and Mohammad Matin "Silicon carbide DC-DC multilevel Cuk converter", Proc. SPIE 9957, Wide Bandgap Power Devices and Applications, 99570I (19 September 2016); https://doi.org/10.1117/12.2238931

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