Improvements of long wave p on n HgCdTe infrared technology

N. Péré-Laperne; R. Taalat; J. Berthoz; L. Rubaldo; E. Carrère; L. Dargent; A. Kerlain

doi:10.1117/12.2241440

26 September 2016 Improvements of long wave p on n HgCdTe infrared technology

N. Péré-Laperne, R. Taalat, J. Berthoz, L. Rubaldo, E. Carrère, L. Dargent, A. Kerlain

Proceedings Volume 9933, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2016; 99330H (2016) https://doi.org/10.1117/12.2241440
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States

Abstract

Sofradir presented its product Scorpio LW based on a p on n HgCdTe technology. This product is in production with a TV format, 15μm pitch. This product was developed and optimized in the framework of the joint laboratory between Sofradir and the CEA-LETI.

The p on n technology is based on an In doped absorbing material and an As implanted junction area. This architecture allows decreasing both dark current and series resistance compared to the legacy n on p technology based on Hg vacancies. This technology demonstrated an operating temperature up to 100K and a typical operability over 99.5%.

Some applications require a lower dark current in the range 90K to 110K, a lower average noise level and a lower number of noise defects than the present ones. In order to address these specific requirements, Sofradir performed some technological improvements.

In this paper, the technological improvements are briefly described. These technological tunings led to a 40% decrease of dark current at 110K. Both noise level and number of noise defects are kept constant in the range 90K to 110K. These improvements are paving the way to a further increase of operating temperature for long wave (LW) devices.

Citation Download Citation

N. Péré-Laperne, R. Taalat, J. Berthoz, L. Rubaldo, E. Carrère, L. Dargent, and A. Kerlain "Improvements of long wave p on n HgCdTe infrared technology", Proc. SPIE 9933, Optical Sensing, Imaging, and Photon Counting: Nanostructured Devices and Applications 2016, 99330H (26 September 2016); https://doi.org/10.1117/12.2241440

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