Scanned laser inspection of SOI wafers for HVM

John F. Valley; Steven W. Meeks; Yushan Chang; Vamsi Velidandla

doi:10.1117/12.2238461

26 September 2016 Scanned laser inspection of SOI wafers for HVM

John F. Valley, Steven W. Meeks, Yushan Chang, Vamsi Velidandla

Proceedings Volume 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII; 99270I (2016) https://doi.org/10.1117/12.2238461
Event: SPIE Nanoscience + Engineering, 2016, San Diego, California, United States

Abstract

In this work we apply a new laser scanning apparatus in multiple ways to measure various aspects of in-process and final silicon-on-insulator (SOI) wafers in high volume manufacturing (HVM). The laser scanner enables high-spatialresolution whole-wafer metrology of topographic features, film thickness variation, and two scattering channels, while bridging between 200 mm and 300 mm diameters on a single platform.

Conference Presentation

Citation Download Citation

John F. Valley, Steven W. Meeks, Yushan Chang, and Vamsi Velidandla "Scanned laser inspection of SOI wafers for HVM", Proc. SPIE 9927, Nanoengineering: Fabrication, Properties, Optics, and Devices XIII, 99270I (26 September 2016); https://doi.org/10.1117/12.2238461

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