Broadband and high-sensitivity terahertz-wave detection using Fermi-level managed barrier diode

Hiroshi Ito; Tadao Ishibashi

doi:10.1117/12.2223320

29 April 2016 Broadband and high-sensitivity terahertz-wave detection using Fermi-level managed barrier diode

Hiroshi Ito, Tadao Ishibashi

Proceedings Volume 9856, Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense; 98560S (2016) https://doi.org/10.1117/12.2223320
Event: SPIE Commercial + Scientific Sensing and Imaging, 2016, Baltimore, MD, United States

Abstract

An all-semiconductor-based hetero-barrier rectifier, named a Fermi-level managed barrier diode (FMB diode), was developed for enabling broadband and low-noise THz-wave detection. The barrier height was controlled by the doping in n-type InGaAs so that a very small height barrier (about 53 meV) could be realized for obtaining a small intrinsic differential resistance (about 23 Ω/m²) and a large output current density (more than 5 X 10³ A/cm²). The fabricated quasi-optical module was operated at frequencies from 200 GHz to 1 THz at room temperature. The typical zero-biased voltage sensitivity was 1280 V/W at 300 GHz, which was higher than the reported best results for InP-based zero-biased broadband Schottky barrier diodes.

Citation Download Citation

Hiroshi Ito and Tadao Ishibashi "Broadband and high-sensitivity terahertz-wave detection using Fermi-level managed barrier diode", Proc. SPIE 9856, Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense, 98560S (29 April 2016); https://doi.org/10.1117/12.2223320

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