Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition

Sannian Song; Lanlan Shen; Zhitang Song; Dongning Yao; Tianqi Guo; Le Li; Bo Liu; Liangcai Wu; Yan Cheng; Yuqiang Ding; Songlin Feng

doi:10.1117/12.2246211

12 October 2016 Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition

Sannian Song, Lanlan Shen, Zhitang Song, Dongning Yao, Tianqi Guo, Le Li, Bo Liu, Liangcai Wu, Yan Cheng, Yuqiang Ding, Songlin Feng

Author Affiliations +

Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 98180N (2016) https://doi.org/10.1117/12.2246211
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China

Abstract

Phase change random access memory (PCM) appears to be the strongest candidate for next-generation high density nonvolatile memory. The fabrication of ultrahigh density PCM depends heavily on the thin film growth technique for the phase changing chalcogenide material. In this study, TiSb₂Te₄ (TST) thin films were deposited by thermal atomic layer deposition (ALD) method using TiCl₄, SbCl₃, (Et₃Si)₂Te as precursors. The threshold voltage for the cell based on thermal ALD-deposited TST is about 2.0 V, which is much lower than that (3.5 V) of the device based on PVD-deposited Ge2Sb2Te5 (GST) with the identical cell architecture. Tests of TST-based PCM cells have demonstrated a fast switching rate of ~100 ns. Furthermore, because of the lower melting point and thermal conductivities of TST materials, TST-based PCM cells exhibit 19% reduction of pulse voltages for Reset operation compared with GST-based PCM cells. These results show that thermal ALD is an attractive method for the preparation of phase change materials.

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Sannian Song, Lanlan Shen, Zhitang Song, Dongning Yao, Tianqi Guo, Le Li, Bo Liu, Liangcai Wu, Yan Cheng, Yuqiang Ding, and Songlin Feng "Phase change properties of Ti-Sb-Te thin films deposited by thermal atomic layer deposition", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 98180N (12 October 2016); https://doi.org/10.1117/12.2246211

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