Paper
30 November 2015 Quality assessment of layer-structured semiconductor single crystals by nuclear quadruple resonance method
Andriy Samila, Alexander Khandozhko, Galina Lastivka, Leonid Politansky, Victor Khandozhko
Author Affiliations +
Proceedings Volume 9809, Twelfth International Conference on Correlation Optics; 98090O (2015) https://doi.org/10.1117/12.2220289
Event: 12th International Conference on Correlation Optics, 2015, Chernivsti, Ukraine
Abstract
A method for quality assessment of layer-structured semiconductor single crystals (InSe, GaSe, GaS) grown in evacuated ampoules by the Bridgman technique is proposed. For this purpose, nuclear quadruple resonance method with a consecutive scanning of the entire sample volume and evaluation of crystal perfection by the resulting spectra is used. Effective interaction between high-frequency field and crystal and, accordingly, restriction of scanning area of sample under study is provided with the use of a two-way saddle-shaped coil for a nuclear quadruple resonance spectrometer.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andriy Samila, Alexander Khandozhko, Galina Lastivka, Leonid Politansky, and Victor Khandozhko "Quality assessment of layer-structured semiconductor single crystals by nuclear quadruple resonance method", Proc. SPIE 9809, Twelfth International Conference on Correlation Optics, 98090O (30 November 2015); https://doi.org/10.1117/12.2220289
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KEYWORDS
Crystals

Semiconductors

Spectroscopy

Crystallography

Gases

Glasses

Signal attenuation

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