Hexagonal GaN films with micron thickness fabricated by nitridation of Mg doped-Ga2O3 crystals

Xiao-Jun Cui; Liang-Ling Wang

doi:10.1117/12.2228343

26 January 2016 Hexagonal GaN films with micron thickness fabricated by nitridation of Mg doped β-Ga₂O₃ crystals

Xiao-Jun Cui, Liang-Ling Wang

Proceedings Volume 9796, Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015; 97960Q (2016) https://doi.org/10.1117/12.2228343
Event: Selected Proceedings of the Chinese Society for Optical Engineering Conferences held November 2015, 2015, Various, China

Abstract

The GaN film with micron thickness was fabricated on the (100) cleavage plane of β-Ga₂O₃ single crystal by nitridation with NH₃ gas flow rate of 400 sccm at 950°C for 10h. The GaN film has small cavities, suggesting that the growth mechanism is three dimensional growth mode like Volmer-Weber model. The thickness of GaN film formed by nitridation is about 1.18 μm. There are GaN (002) and (004) diffraction peaks in the XRD spectra, indicating that the epilayer has a strong c-axis preferred orientation. The photoluminescence spectra, transmittance spectra and Raman spectra of the GaN film were investigated.

Citation Download Citation

Xiao-Jun Cui and Liang-Ling Wang "Hexagonal GaN films with micron thickness fabricated by nitridation of Mg doped β-Ga₂O₃ crystals", Proc. SPIE 9796, Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015, 97960Q (26 January 2016); https://doi.org/10.1117/12.2228343

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