Paper
1 April 2016 A route for industry compatible directed self-assembly of high-chi PS-PDMS block copolymers
S. Böhme, C. Girardot, J. Garnier, J. Arias-Zapata, S. Arnaud, R. Tiron, O. Marconot, D. Buttard, M. Zelsmann
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Abstract
In this work, we present completely industry adapted processes for high-chi PS-PDMS block copolymers. DSA was performed on trenches fabricated within standard photolithography stacks and pattern transfer was made by using etching processes similar to those used for gate etching in industry. We propose the alignment of two different PS-PDMS (45.5kg/mol, 16kg/mol) solely by thermal annealing. By adding plasticizer molecules in the high molecular weight BCP (45.5k), we have not only avoided solvent vapor annealing but also reduced significantly the processing time. The properties of the guiding lines and the quality of the final BCP hard mask (CD uniformity, LWR, LER) were investigated.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Böhme, C. Girardot, J. Garnier, J. Arias-Zapata, S. Arnaud, R. Tiron, O. Marconot, D. Buttard, and M. Zelsmann "A route for industry compatible directed self-assembly of high-chi PS-PDMS block copolymers", Proc. SPIE 9777, Alternative Lithographic Technologies VIII, 97771W (1 April 2016); https://doi.org/10.1117/12.2219312
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KEYWORDS
Etching

System on a chip

Silicon

Annealing

Scanning electron microscopy

Plasma etching

Line width roughness

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