Carrier generation in high gain GaAs photoconductive semiconductor switches

Hong Liu; Li Zheng; Wei Yang; Xiaoling Zhu; Yuting Yang; Dan Wu

doi:10.1117/12.2199894

15 October 2015 Carrier generation in high gain GaAs photoconductive semiconductor switches

Hong Liu, Li Zheng, Wei Yang, Xiaoling Zhu, Yuting Yang, Dan Wu

Proceedings Volume 9671, AOPC 2015: Advances in Laser Technology and Applications; 96711D (2015) https://doi.org/10.1117/12.2199894
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China

Abstract

The carrier generation in high gain GaAs photoconductive semiconductor switches (PCSSs) is researched. Based on the "electron avalanche domain (EAD)" ideas, the physical process of carrier generation is explained. This analysis supports the current filaments velocities that can exceed the value of 2 × 10⁹ cm/s. The results of this theoretical investigation are consistent with those of the reported experimental observations.

Citation Download Citation

Hong Liu, Li Zheng, Wei Yang, Xiaoling Zhu, Yuting Yang, and Dan Wu "Carrier generation in high gain GaAs photoconductive semiconductor switches", Proc. SPIE 9671, AOPC 2015: Advances in Laser Technology and Applications, 96711D (15 October 2015); https://doi.org/10.1117/12.2199894

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