Light emission in silicon: from device physics to applications

Kaikai Xu; Ning Ning; Kingsley A. Ogudo; Jean-Luc Polleux; Qi Yu; Lukas W. Snyman

doi:10.1117/12.2199841

6 November 2015 Light emission in silicon: from device physics to applications

Kaikai Xu, Ning Ning, Kingsley A. Ogudo, Jean-Luc Polleux, Qi Yu, Lukas W. Snyman

Proceedings Volume 9667, International Workshop on Thin Films for Electronics, Electro-Optics, Energy, and Sensors; 966702 (2015) https://doi.org/10.1117/12.2199841
Event: International Workshop on Thin Films for Electronics, Electro-Optics, Energy and Sensors, 2015, Suzhou, China

Abstract

Silicon Photonics is an emerging field of research and technology, where nano-silicon can play a fundamental role. Visible light emitted from reverse-biased p-n junctions at highly localized regions, where avalanche breakdown occurs, can be used to realize a visible electro-optical sources in silicon by means of light-emitting diodes (Si-LEDs) is reviewed by characterizing the spectral distribution. Regarding applications, a monolithic optoelectronic integrated circuit (OEIC) for on-chip optical interconnection based on standard CMOS technology is discussed. Although there are some of the present challenges with regard to the realization of suitable electro-optical elements for diverse integrated circuit applications, the type of silicon light source can be further developed into be a Si-based optical short-distance on-chip optical interconnect applications.

Citation Download Citation

Kaikai Xu, Ning Ning, Kingsley A. Ogudo, Jean-Luc Polleux, Qi Yu, and Lukas W. Snyman "Light emission in silicon: from device physics to applications", Proc. SPIE 9667, International Workshop on Thin Films for Electronics, Electro-Optics, Energy, and Sensors, 966702 (6 November 2015); https://doi.org/10.1117/12.2199841

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