High-frequency resonant tunnelling diode oscillator with high-output power

Jue Wang; Khalid Alharbi; Afesomeh Ofiare; Ata Khalid; David Cumming; Edward Wasige

doi:10.1117/12.2198003

21 October 2015 High-frequency resonant tunnelling diode oscillator with high-output power

Jue Wang, Khalid Alharbi, Afesomeh Ofiare, Ata Khalid, David Cumming, Edward Wasige

Proceedings Volume 9651, Millimetre Wave and Terahertz Sensors and Technology VIII; 96510E (2015) https://doi.org/10.1117/12.2198003
Event: SPIE Security + Defence, 2015, Toulouse, France

Abstract

In this paper, a prototype G-band (140 GHz-220 GHz) monolithic microwave integrated circuit (MMIC) resonant tunneling diode (RTD) oscillator is reported. The oscillator employs two In_0.53Ga_0.47As/AlAs RTD devices in the circuit to increase the output power. The measured output power was about 0.34 mW (-4.7 dBm) at 165.7 GHz, which is the highest power reported for RTD oscillator in G-band frequency range. This result demonstrates the validity of the high frequency/high power RTD oscillator design. It indicates that RTD devices, as one of the terahertz (THz) source candidates, have promising future for room-temperature THz applications in such as imaging, wireless communication and spectroscopy analysis, etc. By optimizing RTD oscillator design, it is expected that considerably higher power (>1 mW) at THz frequencies (>300 GHz) will be obtained.

Citation Download Citation

Jue Wang, Khalid Alharbi, Afesomeh Ofiare, Ata Khalid, David Cumming, and Edward Wasige "High-frequency resonant tunnelling diode oscillator with high-output power", Proc. SPIE 9651, Millimetre Wave and Terahertz Sensors and Technology VIII, 96510E (21 October 2015); https://doi.org/10.1117/12.2198003

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