Fabrication of Resonator-Quantum Well Infrared Photodetector (RQWIP) with 10.2 μm cutoff

J. Sun; K. K. Choi; K. Olver; R. X. Fu

doi:10.1117/12.2186433

28 August 2015 Fabrication of Resonator-Quantum Well Infrared Photodetector (RQWIP) with 10.2 μm cutoff

J. Sun, K. K. Choi, K. Olver, R. X. Fu

Proceedings Volume 9609, Infrared Sensors, Devices, and Applications V; 96090J (2015) https://doi.org/10.1117/12.2186433
Event: SPIE Optical Engineering + Applications, 2015, San Diego, California, United States

Abstract

Recently, we have developed a new detector structure, which is known as the resonator- QWIP or R-QWIP. With the new structure, we demonstrated quantum efficiency (QE) as high as 70% in single detectors and 30 - 40% in focal plane arrays (FPAs) with 9 μm cutoff. In this study, we designed a broadband, 10 μm cutoff R-QWIP FPA using a more accurate refractive index. To achieve the theoretical prediction, the substrates of the detectors have to be removed completely to prevent the escape of unabsorbed light out of the detectors. The height of the diffractive elements (DE) and the thickness of the active resonator must also be uniformly produced within 0.05 μm accuracy. To achieve these specifications, two optimized inductively coupled plasma (ICP) etching processes are developed. Using these etching techniques, a number of single detectors were fabricated to verify the analysis before FPA production. In general, test data support the theoretical predictions.

Citation Download Citation

J. Sun, K. K. Choi, K. Olver, and R. X. Fu "Fabrication of Resonator-Quantum Well Infrared Photodetector (RQWIP) with 10.2 μm cutoff", Proc. SPIE 9609, Infrared Sensors, Devices, and Applications V, 96090J (28 August 2015); https://doi.org/10.1117/12.2186433

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KEYWORDS

Etching

Sensors

Quantum efficiency

Gallium arsenide

Reactive ion etching

Quantum wells

Semiconducting wafers

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