Transient absorption microscopy studies of single metal and semiconductor nanostructures

Paul Johns; Mary Sajini-Devadas; Gregory V. Hartland

doi:10.1117/12.2188136

20 August 2015 Transient absorption microscopy studies of single metal and semiconductor nanostructures

Paul Johns, Mary Sajini-Devadas, Gregory V. Hartland

Proceedings Volume 9549, Physical Chemistry of Interfaces and Nanomaterials XIV; 954914 (2015) https://doi.org/10.1117/12.2188136
Event: SPIE Nanoscience + Engineering, 2015, San Diego, California, United States

Abstract

Transient absorption microscopy is an experimental technique that allows nanomaterials to be studied with ultrafast time resolution and diffraction limited spatial resolution. This paper describes recent results from using transient absorption microscopy to investigate energy relaxation processes in single metal and semiconductor nanowires. The processes that have been examined include charge carrier trapping in semiconductor nanostructures, the motion of surface plasmon polaritons in metal nanowires, and the damping of the acoustic breathing modes of metal nanowires by high viscosity solvents.

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Citation Download Citation

Paul Johns, Mary Sajini-Devadas, and Gregory V. Hartland "Transient absorption microscopy studies of single metal and semiconductor nanostructures", Proc. SPIE 9549, Physical Chemistry of Interfaces and Nanomaterials XIV, 954914 (20 August 2015); https://doi.org/10.1117/12.2188136

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