Study of high aspect ratio silicon etching based on ICP

Jiang Hu; Shun Zhou; Shuai Hu; Yufeng Zhu; Weiguo Liu

doi:10.1117/12.2082855

19 February 2015 Study of high aspect ratio silicon etching based on ICP

Jiang Hu, Shun Zhou, Shuai Hu, Yufeng Zhu, Weiguo Liu

Proceedings Volume 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014); 94493P (2015) https://doi.org/10.1117/12.2082855
Event: The International Conference on Photonics and Optical Engineering and the Annual West China Photonics Conference (icPOE 2014), 2014, Xi'an, China

Abstract

The etching process of the high aspect ratio of Si deep trench is the key technology in MEMS field. Having used Oxford Plasmalabsystem100 ICP-180 etcher with SF₆ and C₄F₈ as the etching gas, the influence on the deep Si etching process of Bosch under different ICP power, bias voltage, temperature, pressure and other parameters has been studied. The experimental result shows that under appropriate parameters, the high-aspect ratio of silicon deep trench is greater than 26:1, the sidewalls’ vertical degree is 89.9°, and the etching rate is greater than 2μm/min; the high aspect ratio of SOI deep trench is greater than 28:1, the sidewalls’ vertical degree is 89.7°, and the etching rate is greater than 2μm/min.

Citation Download Citation

Jiang Hu, Shun Zhou, Shuai Hu, Yufeng Zhu, and Weiguo Liu "Study of high aspect ratio silicon etching based on ICP", Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 94493P (19 February 2015); https://doi.org/10.1117/12.2082855

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