Paper
15 August 1988 In-Situ RHEED Studies To Understand The Dislocation Formation Process In Growth Of InGaAs on GaAs
Paul R. Berger, Kevin H. Chang, Pallab Bhattacharya, Jasprit Singh, K. K. Bajaj
Author Affiliations +
Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947345
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
A detailed study of reflection high energy electron diffraction (RHEED) during growth of InxGai_xAs (0 < x 5_0.5) on GaAs was carried out. We focussed on the initial stages of growth where the growth is expected to be under coherent strain. RHEED studies provide us information on the growth front which is quite different from what is found in the lattice matched systems. In lattice matched systems, as the growth temperature is increased, the growth front becomes increasingly smooth (below congruent temperature) due to the enhanced surface kinetics. However, in the presence of strain we find that increased substrate temperature produces a growth front which is 3-dimensional in nature. This effect is explained by the reasoning that the equilibrium surface for the lattice matched systems are atomically smooth and that for a strained surface can be 3-dimensional depending upon surface strain.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul R. Berger, Kevin H. Chang, Pallab Bhattacharya, Jasprit Singh, and K. K. Bajaj "In-Situ RHEED Studies To Understand The Dislocation Formation Process In Growth Of InGaAs on GaAs", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947345
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KEYWORDS
Gallium arsenide

Indium gallium arsenide

Temperature metrology

Chemical species

Compound semiconductors

Epitaxy

Diffraction

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