Application of the transport of intensity equation to EUV multilayer defect analysis

Dongbo Xu; Peter Evanschitzky; Andreas Erdmann

doi:10.1117/12.2085468

16 March 2015 Application of the transport of intensity equation to EUV multilayer defect analysis

Dongbo Xu, Peter Evanschitzky, Andreas Erdmann

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 942218 (2015) https://doi.org/10.1117/12.2085468
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

This paper proposes a new method for the characterization of multilayer defects of EUV masks. The method uses measured or simulated EUV projection images at different focus positions. The Transport of Intensity Equation (TIE) is applied to retrieve the phase distribution of the reflected light in the vicinity of the defect. An Artificial Neural Network (ANN) is applied to correlate the optical properties of the intensity and recovered phase of the defect with the defect geometry parameters and to reconstruct the defect geometry parameters from though-focus-images of unknown defects.

Citation Download Citation

Dongbo Xu, Peter Evanschitzky, and Andreas Erdmann "Application of the transport of intensity equation to EUV multilayer defect analysis", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 942218 (16 March 2015); https://doi.org/10.1117/12.2085468

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