Investigation of the influence of unwanted micro lenses caused by semiconductor processing excursions on optical behavior of CMOS photodiodes

Andrea Kraxner; Jong Mun Park; Rainer Minixhofer

doi:10.1117/12.2079022

16 March 2015 Investigation of the influence of unwanted micro lenses caused by semiconductor processing excursions on optical behavior of CMOS photodiodes

Andrea Kraxner, Jong Mun Park, Rainer Minixhofer

Author Affiliations +

Proceedings Volume 9357, Physics and Simulation of Optoelectronic Devices XXIII; 93571O (2015) https://doi.org/10.1117/12.2079022
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

In this work the influence of nanoscale particles caused by processing excursions during back end of line (BEOL) processing on top of the photodiode active region was examined. To investigate the influence of the particles on the photodiode performance, wafer level optical responsivity measurements were done. In addition to the measurements the effect of the particles was simulated with a simplified model based on a modified transfer matrix method (MTMM)¹ . The simulation and measurements are in very good agreement with each other and lead to the conclusion that even though some decrease of sensitivity was observed, the overall system variability was reduced by the presence of particles. Furthermore, the influence of the dielectric stack layer thickness variability on the photon flux density is reduced.

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Andrea Kraxner, Jong Mun Park, and Rainer Minixhofer "Investigation of the influence of unwanted micro lenses caused by semiconductor processing excursions on optical behavior of CMOS photodiodes", Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93571O (16 March 2015); https://doi.org/10.1117/12.2079022

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