Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

G. S. Sokolovskii; V. V. Dudelev; E. D. Kolykhalova; Ksenya K. Soboleva; A. G. Deryagin; Innokenty I. Novikov; Mikhail V. Maximov; A. E. Zhukov; V. M. Ustinov; V. I. Kuchinskii; W. Sibbett; E. U. Rafailov; Evgeny A. Viktorov; T. Erneux

doi:10.1117/12.2078746

16 March 2015 Impact of the carrier relaxation paths on two-state operation in quantum dot lasers

G. S. Sokolovskii, V. V. Dudelev, E. D. Kolykhalova, Ksenya K. Soboleva, A. G. Deryagin, Innokenty I. Novikov, Mikhail V. Maximov, A. E. Zhukov, V. M. Ustinov, V. I. Kuchinskii, W. Sibbett, E. U. Rafailov, Evgeny A. Viktorov, T. Erneux

Author Affiliations +

Proceedings Volume 9357, Physics and Simulation of Optoelectronic Devices XXIII; 93570K (2015) https://doi.org/10.1117/12.2078746
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

We study InGaAs QD laser operating simultaneously at ground (GS) and excited (ES) states under 30ns pulsed-pumping and distinguish three regimes of operation depending on the pump current and the carrier relaxation pathways. An increased current leads to an increase in ES intensity and to a decrease in GS intensity (or saturation) for low pump range, as typical for the cascade-like pathway. Both the GS and ES intensities are steadily increased for high current ranges, which prove the dominance of the direct capture pathway. The relaxation oscillations are not pronounced for these ranges. For the mediate currents, the interplay between the both pathways leads to the damped large amplitude relaxation oscillations with significant deviation of the relaxation oscillation frequency from the initial value during the pulse.

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G. S. Sokolovskii, V. V. Dudelev, E. D. Kolykhalova, Ksenya K. Soboleva, A. G. Deryagin, Innokenty I. Novikov, Mikhail V. Maximov, A. E. Zhukov, V. M. Ustinov, V. I. Kuchinskii, W. Sibbett, E. U. Rafailov, Evgeny A. Viktorov, and T. Erneux "Impact of the carrier relaxation paths on two-state operation in quantum dot lasers", Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570K (16 March 2015); https://doi.org/10.1117/12.2078746

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