Paper
1 April 2015 Watt-level continuous-wave diode lasers at 1180 nm with high spectral brightness
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Abstract
Distributed Bragg reflector (DBR) tapered lasers emitting near 1180 nm were developed. The integration of DBR surface gratings in an edge-emitting laser structure with a highly strained quantum well and a tapered laser geometry allows nearly diffraction limited emission into a single longitudinal mode with an optical output power of more than 2 W. The laser will allow direct second harmonic generation (SHG) in a single pass configuration and hence will enable the manufacturing of miniaturized laser modules near 590 nm for out-of-the-lab applications. An integration of a heater element at the DBR grating allows the tuning of the emission wavelength of more than 2 nm without the mechanical movement of gratings. This easy tuning simplifies the phase matching to a SHG crystal.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Paschke, G. Blume, O. Brox, Frank Bugge, J. Fricke, D. Feise, Julian Hofmann, H. Wenzel, and G. Erbert "Watt-level continuous-wave diode lasers at 1180 nm with high spectral brightness", Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480X (1 April 2015); https://doi.org/10.1117/12.2076340
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Cited by 1 scholarly publication.
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KEYWORDS
Semiconductor lasers

Second-harmonic generation

Laser applications

Quantum wells

Continuous wave operation

Waveguides

Optics manufacturing

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