Theoretical revision of quantum efficiency formula for thin AlGaAs/GaAs photocathodes

Cheng Feng; Yijun Zhang; Yunsheng Qian

doi:10.1117/12.2071392

24 October 2014 Theoretical revision of quantum efficiency formula for thin AlGaAs/GaAs photocathodes

Cheng Feng, Yijun Zhang, Yunsheng Qian

Proceedings Volume 9270, Optoelectronic Devices and Integration V; 92701F (2014) https://doi.org/10.1117/12.2071392
Event: SPIE/COS Photonics Asia, 2014, Beijing, China

Abstract

There exist limitations of conventional quantum efficiency models for both reflection-mode (r-mode) and transmission-mode (t-mode) exponential-doped GaAs photocathodes in some cases. The revised quantum efficiency models of the r-mode and t-mode photocathodes are solved from the one-dimensional continuity equations, wherein the built-in electric field in the GaAs layer and the electrons generated from the AlGaAs layer are considered. According to the revised models, the effects of some relational performance parameters are analyzed, such as the thicknesses of GaAs layer and AlGaAs layer, and the interface recombination velocity on the quantum efficiency for t-mode and r-mode photocathodes in combination with the conventional models. The results show that the main contribution of photoelectrons generated from AlGaAs layer to quantum efficiency in the shortwave (i.e. high incident photon energy) region, depends on the factors including cathode thickness and interface recombination velocity.

Citation Download Citation

Cheng Feng, Yijun Zhang, and Yunsheng Qian "Theoretical revision of quantum efficiency formula for thin AlGaAs/GaAs photocathodes", Proc. SPIE 9270, Optoelectronic Devices and Integration V, 92701F (24 October 2014); https://doi.org/10.1117/12.2071392

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