Simulation and experiment of 1310nm high speed InGaAsP/InP EAM

Huitao Wang; Ruikang Zhang; Dan Lu; Chen Ji

doi:10.1117/12.2071725

24 October 2014 Simulation and experiment of 1310nm high speed InGaAsP/InP EAM

Huitao Wang, Ruikang Zhang, Dan Lu, Chen Ji

Proceedings Volume 9270, Optoelectronic Devices and Integration V; 927005 (2014) https://doi.org/10.1117/12.2071725
Event: SPIE/COS Photonics Asia, 2014, Beijing, China

Abstract

We report systematic modelling of 1310 nm InGaAsP/InP electroabsorption modulators. The modulator is a reverse biased p-i-n diode, in which the MQW structure is composed of several InGaAsP/InGaAsP quantum wells. By a 3D finite element software PICS3D, we have comprehensively investigated the internal physical mechanism of the modulator, which includes the red shift of the absorption edge with the reverse bias and the absorption intensity, which could be derived from the normalized overlap integral between the energy levels for the electrons and the holes. The absorption spectrum on wavelength and the reverse bias voltage is analyzed, which provide us with both the extinction ratio and the transimision loss for a special operating wavelength. Key design parameters such as barrier height and quantum well width are optimized for extinction ratio, and confirmed by parallel experimental studies. What’s more, the RF performance has been investigated in detail. The junction capacitance, the series resistance and the parasitic capacitance (mostly the bonding pad) are studied systematically. A ridge structure model is analyzed for high speed performance, in which the important parameters, such as the ridge width, the cavity length, the area of the bonding pad and the thickness of polyimide (or BCB) under the bonding pad, are optimized for over 20GHz 3dB bandwidth. The cavity length is optimized by making compromise between the extinction ratio and the RF performance. In conclusion, the design parameter space of the 1310nm InGaAsP/InP EAM have been systematically explored. Our work should provide a firm basis for 1310nm InGaAsP/InP EAM device design optimization for optical datacom applications.

Citation Download Citation

Huitao Wang, Ruikang Zhang, Dan Lu, and Chen Ji "Simulation and experiment of 1310nm high speed InGaAsP/InP EAM", Proc. SPIE 9270, Optoelectronic Devices and Integration V, 927005 (24 October 2014); https://doi.org/10.1117/12.2071725

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