Paper
28 July 2014 Evaluation of AIMS D2DB simulation without calibration images
Author Affiliations +
Abstract
AIMS is mainly used in photomask industry for verifying the impact of mask defects on wafer CD in DUV lithography process. AIMS verification is used for D2D configuration, where two AIMS images, reference and defect, are captured and compared. Criticality of defects is identified using a number of criteria. As photomasks with aggressive OPC and sub-resolution assist features (SRAFs) are manufactured in production environment, it is required to save time for identifying reference pattern and capturing the AIMS image from the mask. If it is a single die mask, such technology is truly not applicable. A solution is to use AIMS die-to-database (D2DB) methodology which compares AIMS defect image with simulated reference image from mask design data. In general, simulation needs calibration with AIMS images. Because there is the difference between an AIMS image except a defect and a reference image, the difference must be compensated. When it is successfully compensated, AIMS D2DB doesn’t need any reference images, but requires some AIMS images for calibration. Our approach to AIMS D2DB without calibration image is systematic comparison of several AIMS images and to fix optical condition parameters for reducing calibration time. And we tried to calibrate using defect AIMS image to this approach. In this paper, we discuss performance of AIMS D2DB simulation without calibration images.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaharu Nishiguchi, Kouichi Kanno, Katsuya Hayano, Hideyoshi Takamizawa, Kana Ohara, Donghwan Son, and Vikram Tolani "Evaluation of AIMS D2DB simulation without calibration images", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 925605 (28 July 2014); https://doi.org/10.1117/12.2070026
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KEYWORDS
Calibration

Photomasks

SRAF

Opacity

Optical proximity correction

Lithography

Critical dimension metrology

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