Temperature dependent investigation of carrier transport, injection, and densities in 808 nm AlGaAs multi-quantum-well active layers for VCSELs

Andreas P. Engelhardt; Johanna S. Kolb; Friedhard Römer; Ulrich Weichmann; Holger Moench; Bernd Witzigmann

doi:10.1117/12.2051601

2 May 2014 Temperature dependent investigation of carrier transport, injection, and densities in 808 nm AlGaAs multi-quantum-well active layers for VCSELs

Andreas P. Engelhardt, Johanna S. Kolb, Friedhard Römer, Ulrich Weichmann, Holger Moench, Bernd Witzigmann

Author Affiliations +

Proceedings Volume 9134, Semiconductor Lasers and Laser Dynamics VI; 91341G (2014) https://doi.org/10.1117/12.2051601
Event: SPIE Photonics Europe, 2014, Brussels, Belgium

Abstract

The electro-optical efficiency of semiconductor vertical-cavity surface-emitting lasers (VCSELs) strongly depends on the efficient carrier injection into the quantum wells (QWs) in the laser active region. However, carrier injection degrades with increasing temperature which limits the VCSEL performance particularly in high power applications where self heating imposes high temperatures in operation. By simulation we investigate the transport of charge carriers in 808 nm AlGaAs multi-quantum-well active layers with special attention to the temperature dependence of carrier injection into the QWs. Experimental reference data was extracted from oxide-confined, top-emitting VCSELs. The transport simulations follow a drift-diffusion-model complemented by a customized, energy-resolved, semi-classical carrier capture theory. QW gain was calculated in the screened Hartree-Fock approximation with band structures from 8x8 k.p-theory. Using the gain data and by setting losses and the optical confinement factor according to experimental reference results, the appropriate threshold condition and threshold carrier densities in the QWs for a VCSEL are established in simulation for all transport considerations. With the combination of gain and transport model, we can explain experimental reference data for the injection efficiency and threshold current density. Our simulations show that the decreasing injection efficiency with temperature is not solely due to increased thermionic escape of carriers from the QWs. Carrier injection is also hampered by state filling in the QWs initiated from higher threshold carrier densities with temperature. Consequently, VCSEL properties not directly related to the active layer design like optical out-coupling or internal losses link the temperature dependent carrier injection to VCSEL mirror design.

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Andreas P. Engelhardt, Johanna S. Kolb, Friedhard Römer, Ulrich Weichmann, Holger Moench, and Bernd Witzigmann "Temperature dependent investigation of carrier transport, injection, and densities in 808 nm AlGaAs multi-quantum-well active layers for VCSELs", Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91341G (2 May 2014); https://doi.org/10.1117/12.2051601

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