Ultrafast bandgap technique: light-induced semiconductor augmentation

I. K. Zakharova; M. K. Rafailov

doi:10.1117/12.2054010

4 June 2014 Ultrafast bandgap technique: light-induced semiconductor augmentation

I. K. Zakharova, M. K. Rafailov

Proceedings Volume 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI; 90832I (2014) https://doi.org/10.1117/12.2054010
Event: SPIE Defense + Security, 2014, Baltimore, MD, United States

Abstract

Bleaching by ultra-short pulses is discussed as an opportunity for semiconductor optical augmentation. The ability of ultra-short laser pulse to excite and remove electrons in-bulk from valence band may be used to prevent generation of thermal electrons for extended period of time. That time is correlated with recombination time. Diminishing the number of electrons that are available for thermal excitation leads to thermal noise reduction in the same way as semiconductor cooling. Technology based on the effect may be used as effective alternative to thermal cooling, and may allow some semiconductors effectively be exploited at ambient temperatures. Specifically, high sensitive and fast detectors as well as semiconductor lasers covering long and very long-wavelengths may actually work without extra cooling., needed to reduce thermal noise. In this paper, we will consider the effects caused by relatively low pulse energy ultra-short pulse lasers.

Citation Download Citation

I. K. Zakharova and M. K. Rafailov "Ultrafast bandgap technique: light-induced semiconductor augmentation", Proc. SPIE 9083, Micro- and Nanotechnology Sensors, Systems, and Applications VI, 90832I (4 June 2014); https://doi.org/10.1117/12.2054010

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