Paper
27 March 2014 Innovative solutions on 193 immersion-based self-aligned multiple patterning
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Abstract
EUV lithography is one of the most promising techniques for sub-20nm half-pitch HVM devices, however it is well known that EUVL solutions still face significant challenges. Therefore we have focused on 193 immersion extension by using a self-aligned multiple patterning (SAMP), and this technique easily enables fine periodical patterning. Spacer patterning techniques have already been applied to sub-20nm hp advanced devices. In general, SAMP consists of SADP, SATP, SAQP, etc. We have already introduced about evolutional schemes and cost effective processes in past SPIE sessions.[1-12] SAQP enable further down-scaling to 10nm hp from SADP levels, however we must consider next advanced solution for sub-10nm hp resolution. In this paper, we will discuss about a possibility of 193 immersion extension using SAOP (self-aligned octuple patterning).
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sakurako Natori, Shohei Yamauchi, Arisa Hara, Masatoshi Yamato, Kenichi Oyama, and Hidetami Yaegashi "Innovative solutions on 193 immersion-based self-aligned multiple patterning", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511E (27 March 2014); https://doi.org/10.1117/12.2046220
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Cited by 4 scholarly publications and 2 patents.
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KEYWORDS
Optical lithography

Extreme ultraviolet lithography

Photomasks

Chemical vapor deposition

Etching

Lithography

Line width roughness

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