193nm inspection of extreme ultraviolet mask absorber defect

Guk-Jin Kim; In-Seon Kim; Michael Yeung; Chang-Moon Lim; Hye-Keun Oh

doi:10.1117/12.2046587

17 April 2014 193nm inspection of extreme ultraviolet mask absorber defect

Guk-Jin Kim, In-Seon Kim, Michael Yeung, Chang-Moon Lim, Hye-Keun Oh

Proceedings Volume 9048, Extreme Ultraviolet (EUV) Lithography V; 90482S (2014) https://doi.org/10.1117/12.2046587
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

193 nm inspection for various defect types on top of the extreme-ultraviolet (EUV) mask is studied. The antireflection coating (ARC) is tried to enhance the defect inspection. However, adding ARC is not helpful to increase the sensitivity. Thus, 2 nm TaBO generally used for preventing the oxidation is mainly used. The aerial image deformation caused by the defect is compared to that of the defect free mask. Peak intensity difference is quantized and the sensitivity that is comparable to the ITRS defect inspection limit is chosen. The inspection criterion for typical defect types of extrusion, intrusion, pindot and pinhole is compared.

Citation Download Citation

Guk-Jin Kim, In-Seon Kim, Michael Yeung, Chang-Moon Lim, and Hye-Keun Oh "193nm inspection of extreme ultraviolet mask absorber defect", Proc. SPIE 9048, Extreme Ultraviolet (EUV) Lithography V, 90482S (17 April 2014); https://doi.org/10.1117/12.2046587

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