Monolithically integrated Ge CMOS laser

Rodolfo Camacho-Aguilera

doi:10.1117/12.2044057

19 February 2014 Monolithically integrated Ge CMOS laser

Rodolfo Camacho-Aguilera

Proceedings Volume 9010, Next-Generation Optical Networks for Data Centers and Short-Reach Links; 90100H (2014) https://doi.org/10.1117/12.2044057
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Ge-on-Si devices are explored for photonic integration. Through the development of better growth techniques, monolithic integration, laser design and prototypes, it was possible to probe Ge light emitters with emphasis on lasers. Preliminary worked shows thermal photonic behavior capable of enhancing lamination at high temperatures. Increase luminescence is observed up to 120°C from L-band contribution. Higher temperatures show contribution from Δ -band. The increase carrier thermal contribution suggests high temperature applications for Ge light emitters. A Ge electrically pumped laser was probed under 0.2% biaxial strain and doping concentration ~4.5×1019cm-3 n-type. Ge pnn lasers exhibit a gain >1000cm-1 with 8mW power output, presenting a spectrum range of over 200nm, making Ge the ideal candidate for Si photonics. Large temperatures fluctuations and process limit the present device. Theoretically a gain of >4000cm- gain is possible with a threshold of as low as 1kA/cm². Improvements in Ge work

Citation Download Citation

Rodolfo Camacho-Aguilera "Monolithically integrated Ge CMOS laser", Proc. SPIE 9010, Next-Generation Optical Networks for Data Centers and Short-Reach Links, 90100H (19 February 2014); https://doi.org/10.1117/12.2044057

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