Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model

Tsung-Jui Yang; James S. Speck; Yuh-Renn Wu

doi:10.1117/12.2039374

8 March 2014 Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model

Tsung-Jui Yang, James S. Speck, Yuh-Renn Wu

Author Affiliations +

Proceedings Volume 8986, Gallium Nitride Materials and Devices IX; 89861I (2014) https://doi.org/10.1117/12.2039374
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

In this paper, we discussed the influence of the indium fluctuation to the efficiency droop in LEDs. Both the real and randomly generated indium fluctuation are used in the 3D simulation and compared to the uniform indium distribution quantum wells. We found that the electrical and optical properties in LEDs such as the carrier transport, radiative and Auger recombination, and the droop effect, are strongly affected by these nanoscale indium fluctuations.

Citation Download Citation

Tsung-Jui Yang, James S. Speck, and Yuh-Renn Wu "Influence of nanoscale indium fluctuation in the InGaN quantum-well LED to the efficiency droop with a fully 3D simulation model", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 89861I (8 March 2014); https://doi.org/10.1117/12.2039374

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available