680nm AlGaInP Visible Lasers Grown By MOCVD

O Kumagai; M Ikeda; K Nakano; A Toda; T Ohata; H Sato; C Kojima

doi:10.1117/12.944572

2 June 1988 680nm AlGaInP Visible Lasers Grown By MOCVD

O Kumagai, M Ikeda, K Nakano, A Toda, T Ohata, H Sato, C Kojima

Proceedings Volume 0898, Miniature Optics and Lasers; (1988) https://doi.org/10.1117/12.944572
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States

Abstract

A gain-guide tapered stripe laser was fabricated by metalorganic chemical vapor deposition. Improved characteristics, such asoa low threshold current of 48mA, a maximum temperature for continuous wave operation of 81C and an small astigmatic difference of 25pm, have been achieved. Sixteen cdevices have been operating without significant degradation for more than 5000 hours at 50C with a constant output power of 3mW. A high output power of 250mW has also obtained by the broad stripe laser.

Citation Download Citation

O Kumagai, M Ikeda, K Nakano, A Toda, T Ohata, H Sato, and C Kojima "680nm AlGaInP Visible Lasers Grown By MOCVD", Proc. SPIE 0898, Miniature Optics and Lasers, (2 June 1988); https://doi.org/10.1117/12.944572

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